Z Sobiesierski : rechercher sur Z-Library

Sobiesierski, A., Belyanin, Alexey A., Smowton, Peter M., Naidu, D., Smowton, P. M.

Année:

1993

Fichier:

PDF, 121 KB

1993

[IEEE 2012 IEEE 23rd International Semiconductor Laser Conference (ISLC) - San Diego, CA, USA (2012.10.7-2012.10.10)] ISLC 2012 International Semiconductor Laser Conference - Evaluating InAs QD lasers for space borne applications

O'Driscoll, I., Blood, P., Sobiesierski, A., Gwilliam, R., Smowton, P. M.

Année:

2012

Langue:

english

Fichier:

PDF, 302 KB

english, 2012

Electrically pumped continuous-wave III–V quantum dot lasers on silicon

Chen, Siming, Li, Wei, Wu, Jiang, Jiang, Qi, Tang, Mingchu, Shutts, Samuel, Elliott, Stella N., Sobiesierski, Angela, Seeds, Alwyn J., Ross, Ian, Smowton, Peter M., Liu, Huiyun

Journal:

Nature Photonics

Année:

2016

Langue:

english

Fichier:

PDF, 1.93 MB

english, 2016

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Novel In-Plane Semiconductor Lasers X - The lateral ambipolar diffusion length in quantum dot lasers

Année:

2011

Langue:

english

Fichier:

PDF, 339 KB

english, 2011

Photoluminescence as a probe of semiconductor surfaces: CdTe and CdS

Z. Sobiesierski, I.M. Dharmadasa, R.H. Williams

Journal:

Journal of Crystal Growth

Année:

1990

Langue:

english

Fichier:

PDF, 351 KB

english, 1990

The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies

D.A. Woolf, J.P. Williams, D.I. Westwood, Z. Sobiesierski, J.E. Aubrey, R.H. Williams

Journal:

Journal of Crystal Growth

Année:

1993

Langue:

english

Fichier:

PDF, 397 KB

english, 1993

A time-resolved photoluminescence study of amorphous phosphorus

Z. Sobiesierski, R.T. Phillips

Journal:

Solid State Communications

Année:

1986

Langue:

english

Fichier:

PDF, 336 KB

english, 1986

Initial photoluminescence decay rates in amorphous phosphorus

R.T. Phillips, Z. Sobiesierski, W.T. Toner, J.R.M. Barr, A.J. Langley

Journal:

Solid State Communications

Année:

1987

Langue:

english

Fichier:

PDF, 331 KB

english, 1987

Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenation

Z. Sobiesierski, D.A. Woolf, D.I. Westwood, A. Frova, C. Coluzza

Journal:

Solid State Communications

Année:

1992

Langue:

english

Fichier:

PDF, 306 KB

english, 1992

An investigation of metal contacts to II–VI compounds: CdTe and CdS

NM Forsyth, IM Dharmadasa, Z Sobiesierski, RH Williams

Journal:

Vacuum

Année:

1988

Langue:

english

Fichier:

PDF, 199 KB

english, 1988

Metal contacts to II-VI semiconductors: CdS and CdTe

R.H. Williams, N. Forsyth, I.M. Dharmadasa, Z. Sobiesierski

Journal:

Z. Sobiesierski, S.A. Clark, R.H. Williams

Année:

1989

Langue:

english

Fichier:

PDF, 430 KB

english, 1989

Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy

Journal:

Année:

1992

Langue:

english

Fichier:

PDF, 258 KB

english, 1992

Variation of strain in single and multilayer (InxGa1−xAs) structures grown on Si(100), and Si(111), by molecular beam epitaxy

Z. Sobiesierski, D.A. Woolf, D.I. Westwood, R.H. Williams

Journal:

Z. Sobiesierski, D.A. Woolf, D.I. Westwood

Année:

1990

Langue:

english

Fichier:

PDF, 261 KB

english, 1990

Incorporation of H into Inx Ga1−x As / GaAs quantum wells: Optical spectroscopy of H-related radiative states

Journal:

Z. Sobiesierski, D.I. Westwood

Année:

1992

Langue:

english

Fichier:

PDF, 358 KB

english, 1992

Coupling between near-surface Inx Ga1−x As / GaAs(100) quantum wells and the sample surface

Journal:

Z. Sobiesierski, D.I. Westwood, R.H. Williams

Année:

1992

Langue:

english

Fichier:

PDF, 378 KB

english, 1992

Raman scattering from InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy

Journal:

Materials Science and Engineering: B

Année:

1990

Langue:

english

Fichier:

PDF, 289 KB

english, 1990

Reflectance anisotropy spectroscopy and the growth of low-dimensional materials

Z Sobiesierski, D.I Westwood

Journal:

Thin Solid Films

Année:

1998

Langue:

english

Fichier:

PDF, 258 KB

english, 1998

Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy

P.J. Parbrook, K.B. Ozanyan, M. Hopkinson, C.R. Whitehouse, Z. Sobiesierski, D.I. Westwood

Journal:

D.I Westwood, Z Sobiesierski, C.C Matthai

Année:

1998

Langue:

english

Fichier:

PDF, 351 KB

english, 1998

The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects

Journal:

Physica B: Condensed Matter

Année:

1999

Langue:

english

Fichier:

PDF, 93 KB

english, 1999

Phonon study of temperature evolution of strain in GaAs/Si(0 0 1) and GaAs/Si(1 1 1) heterostructures

L.G Quagliano, Z Sobiesierski, D Orani, A Ricci

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 100 KB

english, 1999

On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films

D.I. Westwood, Z. Sobiesierski, E. Steimetz, T. Zettler, W. Richter

Journal:

Z. Sobiesierski, N.M. Forsyth, I.M. Dharmadasa, R.H. Williams

Année:

1998

Langue:

english

Fichier:

PDF, 331 KB

english, 1998

Use of x-ray photoelectron spectroscopy to investigate the deposition of metal overlayers onto the clean cleaved CdS surface

Journal:

Surface Science

Année:

1990

Langue:

english

Fichier:

PDF, 457 KB

english, 1990

Characterization of GaAs buffer layers 0.1 μm thick grown on Si(100)

Z. Sobiesierski, D.A. Woolf, D.I. Westwood, R.H. Williams

Journal:

Materials Science and Engineering: B

Année:

1990

Langue:

english

Fichier:

PDF, 342 KB

english, 1990

Time-resolved photoluminescence in amorphous phosphorus

Z. Sobiesierski, R.T. Phillips

Journal:

Journal of Non-Crystalline Solids

Année:

1987

Langue:

english

Fichier:

PDF, 193 KB

english, 1987

Comprehensive Semiconductor Science and Technology || Quantum-Dot Lasers: Physics and Applications

Sobiesierski, A.

Année:

2011

Langue:

english

Fichier:

PDF, 1.09 MB

english, 2011

In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

Ozanyan, K. B., Parbrook, P. J., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Z., Westwood, D. I.

Journal:

Sobiesierski, Z., Westwood, D. I., Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R.

Année:

1997

Langue:

english

Fichier:

PDF, 222 KB

english, 1997

As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy

Journal:

Sobiesierski, Z., Woolf, D. A., Westwood, D. I., Williams, R. H.

Année:

1997

Langue:

english

Fichier:

PDF, 314 KB

english, 1997

Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy

Journal:

Woolf, D. A., Sobiesierski, Z., Westwood, D. I., Williams, R. H.

Année:

1991

Langue:

english

Fichier:

PDF, 649 KB

english, 1991

The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies

Journal:

Williams, J. P., Westwood, D. I., Sobiesierski, Z., Aubrey, J. E.

Année:

1992

Langue:

english

Fichier:

PDF, 1.28 MB

english, 1992

Growth optimization of n-type GaAs on GaAs(201) substrates

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

1994

Langue:

english

Fichier:

PDF, 619 KB

english, 1994

Photoluminescence spectroscopy of near-surface quantum wells: Electronic coupling between quantized energy levels and the sample surface

Sobiesierski, Z.

Journal:

Année:

1993

Langue:

english

Fichier:

PDF, 552 KB

english, 1993

[IEEE Third International Conference Indium Phosphide and Related Materials - Cardiff, UK (8-11 April 1991)] [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials - Surface InAs/InP quantum wells: epitaxial growth and characterization

Tabata, A., Benyattou, T., Guillot, G., Sobiesierski, Z., Clark, S.A., Williams, R.H., Gendry, M., Hollinger, G., Viktorovitch, P.

Année:

1991

Langue:

english

Fichier:

PDF, 277 KB

english, 1991

Femtosecond pulse generation in passively mode locked InAs quantum dot lasers

Finch, P., Blood, P., Smowton, P. M., Sobiesierski, A., Gwilliam, R. M., O'Driscoll, I.

Journal:

Année:

2013

Langue:

english

Fichier:

PDF, 990 KB

english, 2013

Non-uniform carrier distribution in multi-quantum-well lasers

Smowton, P. M., Lewis, G. M., Sobiesierski, A., Blood, P., Lutti, J., Osbourne, S.

Journal:

Z. Sobiesierski, I. M. Dharmadasa, R. H. Williams

Année:

2003

Langue:

english

Fichier:

PDF, 311 KB

english, 2003

Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy

Z. Sobiesierski, S. A. Clark, R. H. Williams, A. Tabata, T. Benyattou, G. Guillot, M. Gendry, G. Hollinger, P. Viktorovitch

Année:

1991

Langue:

english

Fichier:

PDF, 613 KB

english, 1991

Correlation of photoluminescence measurements with the composition and electronic properties of chemically etched CdTe surfaces

Année:

1988

Langue:

english

Fichier:

PDF, 586 KB

english, 1988

Effect of proton bombardment on InAs dots and wetting layer in laser structures

O’Driscoll, I., Blood, P., Smowton, P. M., Sobiesierski, A., Gwilliam, R.

Journal:

Année:

2012

Langue:

english

Fichier:

PDF, 684 KB

english, 2012

Modeling multiple quantum barrier effects and reduced electron leakage in red-emitting laser diodes

Brown, M. R., Cobley, R. J., Teng, K. S., Rees, P., Wilks, S. P., Sobiesierski, A., Smowton, P. M., Blood, P.

Journal:

Sobiesierski, Z., Westwood, D. I., Elliott, M.

Année:

2006

Langue:

english

Fichier:

PDF, 414 KB

english, 2006

Reflectance anisotropy spectra from Si δ-doped GaAs(001): Correlation of linear electro-optic effect with integrated surface field

Journal:

Physical Review B

Année:

1997

Langue:

english

Fichier:

PDF, 111 KB

english, 1997

Optical monitoring of InP monolayer growth rates

Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Z., Westwood, D. I.

Journal:

Sobiesierski, Z., Clegg, J. B.

Année:

1998

Langue:

english

Fichier:

PDF, 250 KB

english, 1998

Evidence for hydrogen accumulation at strained layer heterojunctions

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

1993

Langue:

english

Fichier:

PDF, 585 KB

english, 1993

Photoluminescence and photoluminescence excitation spectroscopy of H-related defects in strained InxGa1−xAs/GaAs(100) quantum wells

Sobiesierski, Z.

Journal:

Année:

1992

Langue:

english

Fichier:

PDF, 679 KB

english, 1992

Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells

Capizzi, M., Coluzza, C., Emiliani, V., Frankl, P., Frova, A., Sarto, F., Bonapasta, A. Amore, Sobiesierski, Z., Sacks, R. N.

Journal: